IndiumV3, Russie, Analysis, bibRecord, 000B33

Threshold characteristics of InGaAsP/InP multiple quantum well lasers

Identifieur interne : 000B33 ( Russie/Analysis ); précédent : 000B32; suivant : 000B34

Threshold characteristics of InGaAsP/InP multiple quantum well lasers

Auteurs : RBID : Pascal:01-0033636

Descripteurs français

Pascal (Inist)
- Etude théorique, Simulation ordinateur, Laser semiconducteur, Laser puits quantique, Puits quantique multiple, Courant seuil, Recombinaison radiative, Effet Auger, Courant fuite, Dépendance température, Indium arséniure, Indium phosphure, Gallium arséniure, Gallium phosphure, Substrat InP, Laser InGaAsP, As Ga In P, 4255P, 4260L.

English descriptors

KwdEn :
- Auger effect, Computerized simulation, Gallium arsenides, Gallium phosphides, Indium arsenides, Indium phosphides, Leakage currents, Multiple quantum well, Quantum well lasers, Radiative recombination, Semiconductor lasers, Temperature dependence, Theoretical study, Threshold current.

Abstract

A theoretical analysis and computer simulation of the threshold current density j_th and characteristic temperature T₀ of multiple quantum well lasers (MQWLs) are presented. Together with the spontaneous radiative recombination, the Auger recombination and the lateral diffusive leakage of carriers from the active region are included into the model. A first-principle calculation of the Auger recombination current is performed. It is shown that the lateral diffusive leakage current is controlled by the radiative and Auger currents. When calculating the carrier densities, the electrons in the barrier regions are properly taken into account. Redistribution of electrons over the active region is shown to increase the threshold current considerably. The dependences of j_th and T₀ on temperature, number of QWs, cavity length and lateral size are discussed in detail. The effect of lattice and carrier heating on j_th and T₀ is investigated and shown to be essential at high temperature.

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Pascal:01-0033636

Le document en format XML

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<author><name sortKey="Asryan, L V" uniqKey="Asryan L">L. V. Asryan</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Ioffe Physico-Technical Institute, 26 Polytekhnicheskaya Str.</s1>
<s2>St Petersburg 194021</s2>
<s3>RUS</s3>
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<country>Russie</country>
<wicri:noRegion>St Petersburg 194021</wicri:noRegion>
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<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>State University of New York at Stony Brook</s1>
<s2>Stony Brook, NY 11794-2350</s2>
<s3>USA</s3>
<sZ>1 aut.</sZ>
</inist:fA14>
<country>États-Unis</country>
<wicri:noRegion>State University of New York at Stony Brook</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Gun Ko, N A" uniqKey="Gun Ko N">N. A. Gun Ko</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Ioffe Physico-Technical Institute, 26 Polytekhnicheskaya Str.</s1>
<s2>St Petersburg 194021</s2>
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<author><name sortKey="Polkovnikov, A S" uniqKey="Polkovnikov A">A. S. Polkovnikov</name>
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<author><name sortKey="Suris, R A" uniqKey="Suris R">R. A. Suris</name>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Auger effect</term>
<term>Computerized simulation</term>
<term>Gallium arsenides</term>
<term>Gallium phosphides</term>
<term>Indium arsenides</term>
<term>Indium phosphides</term>
<term>Leakage currents</term>
<term>Multiple quantum well</term>
<term>Quantum well lasers</term>
<term>Radiative recombination</term>
<term>Semiconductor lasers</term>
<term>Temperature dependence</term>
<term>Theoretical study</term>
<term>Threshold current</term>
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<keywords scheme="Pascal" xml:lang="fr"><term>Etude théorique</term>
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<term>Indium arséniure</term>
<term>Indium phosphure</term>
<term>Gallium arséniure</term>
<term>Gallium phosphure</term>
<term>Substrat InP</term>
<term>Laser InGaAsP</term>
<term>As Ga In P</term>
<term>4255P</term>
<term>4260L</term>
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<front><div type="abstract" xml:lang="en">A theoretical analysis and computer simulation of the threshold current density j<sub>th</sub>
 and characteristic temperature T<sub>0</sub>
 of multiple quantum well lasers (MQWLs) are presented. Together with the spontaneous radiative recombination, the Auger recombination and the lateral diffusive leakage of carriers from the active region are included into the model. A first-principle calculation of the Auger recombination current is performed. It is shown that the lateral diffusive leakage current is controlled by the radiative and Auger currents. When calculating the carrier densities, the electrons in the barrier regions are properly taken into account. Redistribution of electrons over the active region is shown to increase the threshold current considerably. The dependences of j<sub>th</sub>
 and T<sub>0</sub>
 on temperature, number of QWs, cavity length and lateral size are discussed in detail. The effect of lattice and carrier heating on j<sub>th</sub>
 and T<sub>0</sub>
 is investigated and shown to be essential at high temperature.</div>
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 and T<sub>0</sub>
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<fC03 i1="17" i2="3" l="FRE"><s0>As Ga In P</s0>
<s4>INC</s4>
<s5>77</s5>
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<fC03 i1="18" i2="3" l="FRE"><s0>4255P</s0>
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<s5>92</s5>
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Threshold characteristics of InGaAsP/InP multiple quantum well lasers

Threshold characteristics of InGaAsP/InP multiple quantum well lasers

Descripteurs français

English descriptors

Abstract

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Links to Exploration step

Le document en format XML

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